The Pd-Zn system for ohmic contacts to p-type GaPTAN FU LEI; GUANG KAI JENG.Solid-state electronics. 1988, Vol 31, Num 1, pp 109-113, issn 0038-1101Article

The enhanced Stark effects of coupled quantum wells and their application to tunable IR photodetectorsYIMIN HUANG; CHENHSIN LIEN; TAN-FU LEI et al.Journal of applied physics. 1993, Vol 74, Num 4, pp 2598-2604, issn 0021-8979Article

Thermodynamic study of the phase transitions of the mesogens and the homologous trends of their melting entropiesWANG BANG-NING; TAN FU; HU RI-HENG et al.Thermochimica acta. 1989, Vol 139, pp 83-91, issn 0040-6031Article

The characteristics of polysilicon oxide grown on amorphous silicon deposited from disilaneYEOU MING LIN; TAN FU LEI.Japanese journal of applied physics. 1997, Vol 36, Num 8, pp 5040-5043, issn 0021-4922, 1Article

Fullerene-incorporation for enhancing the electron beam resist performance for contact hole patterning and fillingYOU, Hsin-Chiang; KO, Fu-Hsiang; LEI, Tan-Fu et al.Thin solid films. 2006, Vol 500, Num 1-2, pp 214-218, issn 0040-6090, 5 p.Article

Correlation of polysilicon thin-film transistor characteristics rto defect states via thermal annealingHORNG NAN CHERN; CHUNG LEN LEE; TAN FU LEI et al.I.E.E.E. transactions on electron devices. 1994, Vol 41, Num 3, pp 460-462, issn 0018-9383Article

Thin oxide grown on heavily channel-implanted substrate by using a low temperature wafer loading and N₂ pre-annealing processSHYE LIN WU; CHUNG LEN LEE; TAN FU LEI et al.Solid-state electronics. 1993, Vol 36, Num 12, pp 1725-1730, issn 0038-1101Article

Characteristics of top-gate polysilicon thin-film transistors fabricated on fluorine-implanted and crystallized amorphous silicon filmsCHIEN KUO YANG; TAN FU LEI; CHUNG LEN LEE et al.Journal of the Electrochemical Society. 1996, Vol 143, Num 10, pp 3302-3307, issn 0013-4651Article

A novel planarization of trench isolation using polysilicon refill and etchback of chemical-mechanical polishJUING-YI CHENG; TAN FU LEI; TIEN SHENG CHAO et al.Journal of the Electrochemical Society. 1995, Vol 142, Num 10, pp L187-L188, issn 0013-4651Article

The refractive index in InP and its oxide measured by multiple-angle incident ellipsometryTIEN SHENG CHAO; CHUNG LEN LEE; TAN FU LEI et al.Journal of materials science letters. 1993, Vol 12, Num 10, pp 721-723, issn 0261-8028Article

Electrical characristics of a stacked nitride/microcrystalline-silicon/oxide/silicon structureSHYE LIN WU; CHUNG LEN LEE; TAN FU LEI et al.Applied physics letters. 1993, Vol 63, Num 1, pp 24-26, issn 0003-6951Article

H₂/O₂ plasma on polysilicon thin-film transistorHORNG NAN CHERN; CHUNG LEN LEE; TAN FU LEI et al.IEEE electron device letters. 1993, Vol 14, Num 3, pp 115-117, issn 0741-3106Article

Characterization of semi-insulating polycrystalline silicon prepared by low pressure chemical vapor depositionTIEN SHENG CHAO; CHUNG LEN LEE; TAN FU LEI et al.Journal of the Electrochemical Society. 1993, Vol 140, Num 9, pp 2645-2648, issn 0013-4651Article

A study of the interfacial layer of Al and Al(1% Si)-Si contacts using a zero-layer ellipsometry modelTIEN SHENG CHAO; CHUNG LEN LEE; TAN FU LEI et al.Solid-state electronics. 1992, Vol 35, Num 11, pp 1579-1584, issn 0038-1101Article

Error reduction in the ellipsometric measurement on thin filmsJAU HWANG HO; CHUNG LEN LEE; TAN FU LEI et al.Solid-state electronics. 1988, Vol 31, Num 8, pp 1321-1326, issn 0038-1101Article

Specific contact resistivity measurement by a vertical Kelvin test structureTAN FU LEI; LEN-YI LEU; CHUNG LEN LEE et al.I.E.E.E. transactions on electron devices. 1987, Vol 34, Num 6, pp 1390-1395, issn 0018-9383Article

Enhanced H₂-plasma effects on polysilicon thin-film transistors with thin ONO gate-dielectricsCHIEN KUO YANG; CHUNG LEN LEE; TAN FU LEI et al.IEEE electron device letters. 1995, Vol 16, Num 6, pp 228-229, issn 0741-3106Article

The effects of H₂-O₂-plasma treatment on the characteristics of polysilicon thin-film transistorsHORNG NAN CHERN; CHUNG LEN LEE; TAN FU LEI et al.I.E.E.E. transactions on electron devices. 1993, Vol 40, Num 12, pp 2301-2306, issn 0018-9383Article

Study of an organic silver ion solid electrolyte for use as an oxygen probeWANG YONG-NENG; TAN FU-BIN; JIA NENG-CHENG et al.Solid state ionics. 1987, Vol 22, Num 2-3, pp 151-154, issn 0167-2738Article

Fourier transform infrared spectroscopic study of oxide films grown in pure N₂OTIEN SHENG CHAO; WEN HO CHEN; TAN FU LEI et al.Japanese journal of applied physics. 1995, Vol 34, Num 5A, pp 2370-2373, issn 0021-4922, 1Article

The effects of fluorine passivation on polysilicon thin-film transistorsHORNG NAN CHERN; CHUNG LEN LEE; TAN FU LEI et al.I.E.E.E. transactions on electron devices. 1994, Vol 41, Num 5, pp 698-702, issn 0018-9383Article

Ultrathin textured polycrystalline oxide with a high electron conduction efficiency prepared by thermal oxidation of thin polycrystalline silicon film on n⁺ polycrystalline siliconSHYE LIN WU; CHUNG LEN LEE; TAN FU LEI et al.Applied physics letters. 1993, Vol 62, Num 26, pp 3491-3492, issn 0003-6951Article

Ellipsometry measurements ,on refractive index profiles of thin filmsJAU HWANG HO; CHUNG LEN LEE; TAN FU LEI et al.IEEE transactions on instrumentation and measurement. 1990, Vol 39, Num 4, pp 642-648, issn 0018-9456Article

Switching characteristics of MINPN devicesCHANG, D. C. Y; CHUNG LEN LEE; TAN FU LEI et al.Solid-state electronics. 1989, Vol 32, Num 3, pp 179-189, issn 0038-1101Article

A switching device of a PN junction structure with two layers of thin oxideCHANG, D. C. Y; CHUNG LEN LEE; TAN FU LEI et al.Japanese journal of applied physics. 1989, Vol 28, Num 6, pp 972-974, issn 0021-4922, 3 p., 1Article